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I-line Positive Photoresist Series

Wenzhou Yingyue supplies high-purity I-line positive photoresists (365nm) for semiconductor and advanced packaging. Features ultra-low metal ions (≤10ppb), high resolution (down to 0.35μm), and excellent adhesion. Ideal for IC key layers, MEMS, and LED fabrication. Samples available.

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I-line Positive Photoresist Series

Product Overview

Our I-line positive photoresist series is designed for 365nm wavelength exposure, based on the proven Novolac resin / DNQ (Diazonaphthoquinone) photosensitive system. With ultra-low metal ion contamination (≤10ppb), high resolution, and excellent adhesion, it is the ideal choice for mature semiconductor process nodes and advanced packaging applications. 

Key Features

· High Resolution: Achieves critical dimensions down to 0.35μm, suitable for key layer patterning in IC manufacturing. 

· Ultra-High Purity: Metal ion content controlled at ≤10ppb, preventing contamination during wafer fabrication. 

· Excellent Adhesion: Strong bonding to silicon, oxide, and metal substrates, ensuring reliable pattern transfer during wet/dry etching. 

· Wide Process Window: Generous depth of focus (DOF) and exposure latitude for high yield and process stability. 

· Fast Photospeed: Optimized DNQ formulation reduces exposure dose, improving throughput on i-line steppers. 

Typical Specifications

Parameter

Specification

Exposure Wavelength

365nm (i-line)

Resolution

0.35 – 0.50 μm

Film Thickness

0.5 – 2.5 μm (adjustable by viscosity)

Metal Ion Content

≤10 ppb

Developer

2.38% TMAH (aq.)

Solvent

PGMEA (safer solvent)

Shelf Life

12 months (stored at 0–10°C, dark)

Applications

· IC Manufacturing: Logic chips, analog ICs, power management ICs (PMIC), display driver ICs at 0.35–0.5μm nodes 

· Power Semiconductors: MOSFET, IGBT, SiC, GaN device fabrication 

· Advanced Packaging: Bumping, RDL (Redistribution Layer), TSV (Through-Silicon Via) processes 

· MEMS & Sensors: Micro-electro-mechanical system patterning

· LED Manufacturing: Chip-level lithography for LED wafers 

Available Grades

Grade

Resolution

Film Thickness

Best For

High-Resolution Grade

0.35 μm

0.75 – 1.5 μm

IC key layers, fine patterning

Standard Grade

0.50 μm

1.0 – 2.0 μm

Non-critical layers, general IC

Thick-Film Grade

0.50+ μm

3.0 – 5.0 μm

Bumping, RDL, passivation

Anti-Reflective Grade

0.35 μm

1.0 – 2.0 μm

Aluminum & high-reflectivity substrates

Why Choose Our I-line Photoresist?

· Stable Supply Chain: Consistent batch-to-batch quality with reliable production capacity

· Export-Ready: Full COA, SDS, and export compliance documentation provided

· Technical Support: Process optimization guidance and on-site application support available

· Samples Available: Free evaluation samples for R&D verification and process qualification

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