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G-line Positive Photoresist Series

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Product Overview

Our G-line positive photoresist series is engineered for 405nm wavelength exposure, based on the mature Novolac resin / DNQ (Diazonaphthoquinone) photosensitive system. Designed for cost-effective lithography at G-line wavelength, this series delivers reliable performance with ultra-low metal ion contamination (≤10ppb), high resolution, and exceptional adhesion to a wide range of substrates. It is the ideal choice for LED manufacturing, power semiconductor devices, MEMS fabrication, and advanced packaging applications where G-line exposure tools are preferred.

Key Features

· High Resolution: Achieves critical dimensions down to 0.5μm, suitable for fine patterning in LED, power device, and MEMS manufacturing.

· Ultra-High Purity: Metal ion content controlled at ≤10ppb, preventing contamination during wafer fabrication and ensuring high device yield.

· Excellent Adhesion: Strong bonding to silicon, silicon dioxide, metals (Al, Cu, Ag), and dielectric substrates, ensuring reliable pattern transfer during wet and dry etching processes.

· Wide Process Window: Generous depth of focus (DOF) and exposure latitude for high yield and process stability in mass production.

· Cost-Effective: Optimized formulation provides excellent sensitivity at 405nm, reducing exposure time and improving throughput on G-line steppers and aligners.

Typical Specifications

Parameter

Specification

Exposure Wavelength

405nm (G-line)

Resolution

0.50 – 1.0 μm

Film Thickness

0.5 – 3.0 μm (adjustable by viscosity and spin speed)

Metal Ion Content

≤10 ppb

Developer

2.38% TMAH (aq.) or IVF (NVPG based)

Solvent

PGMEA (Propylene Glycol Monomethyl Ether Acetate)

Shelf Life

12 months (stored at 0–10°C, dark)

Applications

· IC Manufacturing: Logic chips, analog ICs, power management ICs (PMIC), display driver ICs at 0.5–1.0μm nodes

· LED Manufacturing: Chip-level lithography for LED wafers, including GaN-based LED patterning and sapphire substrate processing

· Power Semiconductors: MOSFET, IGBT, SiC, GaN power device fabrication, including passivation and field plate patterning

· Advanced Packaging: Bumping, RDL (Redistribution Layer), TSV (Through-Silicon Via), and fan-out wafer-level packaging processes

· MEMS & Sensors: Micro-electro-mechanical system patterning, pressure sensors, accelerometers, and biosensors

Available Grades

Grade

Resolution

Film Thickness

Best For

High-Resolution Grade

0.50 μm

0.75 – 1.5 μm

LED fine patterning, MEMS key layers

Standard Grade

0.75 μm

1.0 – 2.5 μm

Power device passivation, general IC

Thick-Film Grade

0.75+ μm

3.0 – 6.0 μm

Bumping, RDL, passivation, TSV

Anti-Reflective Grade

0.50 μm

1.0 – 2.5 μm

Aluminum & high-reflectivity substrates

Why Choose Our G-line Photoresist?

· Stable Supply Chain: Consistent batch-to-batch quality with reliable production capacity to support large-scale manufacturing.

· Export-Ready: Full COA, SDS, and export compliance documentation provided for smooth customs clearance worldwide.

· Technical Support: Process optimization guidance and on-site application support available from our experienced team.

· Samples Available: Free evaluation samples for R&D verification and process qualification.

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