Negative Photoresist Series

Product Overview

Our negative photoresist series is based on the proven cycloalkene rubber / diazo photosensitive system, designed for G-line (436nm) and I-line (365nm) exposure wavelengths. With high adhesion to silicon, metal, and oxide substrates, excellent etch resistance, and reliable pattern transfer, it is the ideal choice for discrete device manufacturing including mesa and planar processes. Our YY-N210 and YY-N220 series products offer tailored solutions for diverse process requirements, from high-adhesion mesa structures to high-resolution planar patterning.

Key Features

• High Adhesion – Excellent adhesion to silicon, oxide, and metal substrates.

• Excellent Etch Resistance – High selectivity against common etchants including CF4, O2, and Ar-based plasmas.

• High Resolution – Resolution down to 1.0 μm with steep sidewall profiles.

• Wide Process Window – Generous exposure latitude and bake tolerance for stable production.

• Good Step Coverage – Superior conformal coverage on non-uniform surfaces and stepped topographies.

Typical Specifications

Parameter	Specification
Exposure Wavelength	365nm (I-line) / 436nm (G-line)
Resolution	1.0 – 3.0 μm
Film Thickness	1.0 – 5.0 μm (adjustable by viscosity and spin speed)
Sensitivity	50 – 200 mJ/cm² (depending on grade)
Developer	NMP (N-Methyl-2-pyrrolidone) or 2.38% TMAH (aq.)
Soft Bake	90 – 110°C / 60 – 120s
Hard Bake	120 – 150°C / 60 – 120s
Metal Ion Content	≤10 ppm
Viscosity	20 – 80 cP (adjustable by formulation)
Shelf Life	12 months (stored at 0–10°C, dark)

Applications

• Discrete Device Mesa Process – Power diodes, rectifiers, and Zener diodes requiring high step coverage and strong etch resistance.

• Discrete Device Planar Process – Transistors (BJT, MOSFET), thyristors (SCR), and photodiodes requiring high resolution and fine patterning.

• Passivation Layer Patterning – Window opening in SiO2 and Si3N4 passivation layers for metallization and bonding pads.

• Isolation Region Definition – Field isolation and device isolation patterning in power semiconductor devices.

• MEMS & Sensors – Thick-film and high-aspect-ratio structure fabrication for micro-electromechanical systems and sensors.

Available Grades

Grade	Resolution	Film Thickness	Best For
Standard Grade (YY-N210)	2.0 μm	2.0 – 5.0 μm	Mesa process, high adhesion, general discrete devices
High-Resolution Grade (YY-N220)	1.0 μm	1.0 – 3.0 μm	Planar process, fine patterning, high-resolution devices
High-Etch-Resistance Grade (YY-N230)	2.0 μm	2.0 – 5.0 μm	Aggressive etch processes, high selectivity requirements
Improved Coverage Grade (YY-N260)	2.0 μm	2.0 – 5.0 μm	Stepped surfaces, non-uniform topography, mesa structures