Lift-off Photoresist Series

Wenzhou Yingyue supplies the YY-L1150 series of lift-off photoresists — chemically amplified negative tone resists engineered for precision metal deposition and lift-off processes. Featuring adjustable sidewall undercut profiles, wide post-exposure bake (PEB) windows, and excellent thermal stability up to 200°C, our lift-off resists enable clean metal patterning for MEMS, advanced packaging, LED processing, and sensor applications. Samples available.

Product Overview

Our lift-off photoresist series is a chemically amplified negative tone resist based on an advanced resin system, specifically engineered for lift-off lithography processes. Unlike conventional negative resists, the YY-L1150 series delivers a controllable undercut sidewall profile that can be precisely tuned through exposure dose and post-exposure bake (PEB) conditions. This unique capability eliminates the need for complex bi-layer resist stacks in many applications, simplifying the process flow while maintaining high patterning fidelity. With metal ion content controlled at ≤10ppb, excellent thermal stability up to 200°C, and clean removal using standard photoresist strippers, the YY-L1150 series is the ideal choice for semiconductor packaging, MEMS fabrication, LED processing, and advanced sensor manufacturing.

Key Features

• Adjustable Undercut Profile: Sidewall angle precisely controlled by exposure dose and PEB temperature, enabling reliable lift-off without metal bridging or residue.

• Wide PEB Window: Generous post-exposure bake latitude ensures consistent pattern quality across large wafers and multiple lots.

• High Thermal Stability: Patterned resist withstands temperatures up to 200°C, suitable for high-temperature process steps including metal annealing and passivation.

• Ultra-Low Metal Ion Content: Metal ion contamination controlled at ≤10ppb, preventing device degradation during semiconductor fabrication.

• Easy Stripping: Clean and complete removal with standard photoresist stripping chemistries (e.g., NMP, acetone), leaving minimal residue.

• Broad Wavelength Sensitivity: Compatible with G-line (436nm), I-line (365nm), and broadband UV exposure systems.

Typical Specifications

Parameter	Specification
Photoresist Type	Chemically Amplified Negative Tone
Exposure Wavelength	Broadband UV / G-line (436nm) / I-line (365nm)
Resolution	1.0 – 5.0 μm (dependent on film thickness)
Film Thickness	0.5 – 20 μm (adjustable by viscosity and spin speed)
Undercut Ratio	0.3 – 0.8 (adjustable via exposure dose & PEB)
Metal Ion Content	≤10 ppb
Developer	2.38% TMAH (aq.) or equivalent alkaline developer
Soft Bake	100 – 120°C, 60 – 90 sec (hot plate)
Post-Exposure Bake (PEB)	110 – 140°C, 60 – 120 sec (hot plate)
Pattern Thermal Stability	Up to 200°C
Stripping Solution	NMP, acetone, or commercial resist stripper
Shelf Life	12 months (stored at 0–10°C, dark)

Applications

• Metal Lift-Off Processes: Precision patterning for metal evaporation and sputtering deposition, eliminating the need for bi-layer resist stacks in many applications.

• MEMS & Sensors: Fabrication of micro-electro-mechanical structures, cantilevers, pressure sensors, and biochips requiring high-aspect-ratio lift-off features.

• Advanced Packaging: Bump metallization, RDL (Redistribution Layer) patterning, and TSV (Through-Silicon Via) metallization in semiconductor packaging.

• LED & Optoelectronics: Metal contact patterning for laser diodes, LED chips, and photodetectors with precise electrode geometries.

• GaAs & Compound Semiconductors: Device fabrication for GaAs ICs, ferroelectric RAMs, and other compound semiconductor platforms.

Available Grades

Grade	Resolution	Film Thickness	Undercut Ratio	Best For
YY-L1150 (Standard)	2.0 μm	1.0 – 5.0 μm	0.4 – 0.6	General lift-off, LED metal contacts
YY-L1150H (High-Thickness)	5.0 μm	5.0 – 20.0 μm	0.3 – 0.5	Thick metal lift-off, MEMS structures
YY-L1150R (High-Resolution)	1.0 μm	0.5 – 3.0 μm	0.5 – 0.8	Fine-pitch metallization, sensor electrodes
YY-L1150AR (Anti-Reflective)	1.5 μm	1.0 – 8.0 μm	0.4 – 0.7	High-reflectivity substrates, bi-layer processes